𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Growth of Fe4N thin films by atmospheric pressure vapor phase epitaxy

✍ Scribed by N. Tamura; N. Takahashi; T. Nakamura; T. Takahashi

Book ID
110368579
Publisher
Springer
Year
2002
Tongue
English
Weight
378 KB
Volume
21
Category
Article
ISSN
0261-8028

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Atmospheric pressure growth of Eu-doped
Atmospheric pressure growth of Eu-doped GaN by organometallic vapor phase epitaxy
✍ Furukawa, Naoki ;Nishikawa, Atsushi ;Kawasaki, Takashi ;Terai, Yoshikazu ;Fujiwa πŸ“‚ Article πŸ“… 2010 πŸ› John Wiley and Sons 🌐 English βš– 257 KB

## Abstract We investigated the luminescence properties of the Eu‐doped GaN (GaN:Eu) grown at atmospheric (100 kPa) and low (10 kPa) pressures by organometallic vapor phase epitaxy (OMVPE). Although Eu concentration of atmospheric pressure GaN:Eu (AP‐GaN:Eu) is lower than that of low pressure GaN:E