✦ LIBER ✦
Growth of extremely uniform III–V compound semiconductor layers by LP-MOVPE by application of the gas foil technique for substrate rotation
✍ Scribed by D. Schmitz; G. Strauch; H. Jürgensen; M. Heyen
- Publisher
- Elsevier Science
- Year
- 1991
- Tongue
- English
- Weight
- 230 KB
- Volume
- 107
- Category
- Article
- ISSN
- 0022-0248
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