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Growth of erbium-doped GaAs and InP by metalorganic chemical vapor deposition using Er(CH3C5H4)3 and Er(C5H5)3

✍ Scribed by Kunihiko Uwai; Hiroshi Nakagome; Kenichiro Takahei

Book ID: 107790176
Publisher: Elsevier Science
Year: 1988
Tongue: English
Weight: 478 KB
Volume: 93
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(88)90587-8

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