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Growth of 5H-type silicon carbide whisker

✍ Scribed by Yiya Peng; Zhaoyu Meng; Chang Zhong; Jun Lu; Weichao Yu; Yitai Qian


Book ID
114065838
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
305 KB
Volume
36
Category
Article
ISSN
0025-5408

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A two-step reaction scheme has been employed for the synthesis of SiC whiskers at 1450 ~ under an argon or hydrogen flow. First, SiO vapour was generated via the carbothermal reduction of silica in a controlled manner. Second, the generated SiO vapour was reacted with carbon-carrying vapours such as