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Growth modes and microstructures of ZnO layers deposited by plasma-assisted molecular-beam epitaxy on (0001) sapphire

✍ Scribed by Vigue, F.; Vennegues, P.; Deparis, C.; Vezian, S.; Laugt, M.; Faurie, J.-P.

Book ID: 118253071
Publisher: American Institute of Physics
Year: 2001
Tongue: English
Weight: 784 KB
Volume: 90
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.1412572

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## Abstract Crystal epilayers of (111)‐oriented GaAs have been grown successfully on sapphire (0001) substrates by molecular beam epitaxy. Although the epilayers were found to have a very high twin density, large areas (cm^2^) with no grain boundaries were observed. Both substrate surface preparati