Growth mechanism of high Tc phase in leaded BiSrCaCuO system
✍ Scribed by T. Hatano; K. Aota; H. Hattori; S. Ikeda; K. Nakamura; K. Ogawa
- Publisher
- Elsevier Science
- Year
- 1990
- Tongue
- English
- Weight
- 358 KB
- Volume
- 30
- Category
- Article
- ISSN
- 0011-2275
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✦ Synopsis
The growth mechanism of the high T c phase in the leaded Bi-Sr-Ca-Cu-O system has been studied. It is shown that the crystal growth of the high T c phase takes place with the coexistence of a partial melting phase. A growth mechanism is proposed in which the high T c phase precipitates from the melting phase during sintering. The solidification of the melting phase during the subsequent cooling process becomes an inevitable cause of the limited critical current density in this system.
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