Growth mechanism in atomic layer epitaxy (III) reevaporation of Cd and Te from CdTe (111) surfaces and thick elemental deposits monitored by quadrupole-mass spectrometry

Growth Mechanism in Atomic Layer Epitaxy

Growth Mechanism in Atomic Layer Epitaxy (I) Re-evaporation of Cd and Te from CdTe(111) Surfaces Monitored by Auger Electron Spectroscopy

✍ Dr. M. A. Herman; O. Jylhä; Prof. Dr. M. Pessa 📂 Article 📅 1986 🏛 John Wiley and Sons 🌐 English ⚖ 559 KB

## Re-evaporation of Cd and Te from CdTe(ll1) Surfaces Monitored by Auger Electron Spectroscopy The mechanism of atomic layer epitaxy (ALE) of cadmium telluride has been studied. Auger electron spectroscopy is used to measure the isothermal re-evaporation rates of elemental Cd and Te deposits on t