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Growth characteristics of GaAs-Ga1−xAlxAs structures fabricated by liquid-phase epitaxy over preferentially etched channels

✍ Scribed by Botez, Dan; Tsang, Won Tien; Wang, Shyh


Book ID
120519997
Publisher
American Institute of Physics
Year
1976
Tongue
English
Weight
547 KB
Volume
28
Category
Article
ISSN
0003-6951

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