Growth Characteristics of Carbon Nanotube Arrays Synthesized by ICP-CVD using Anodic Aluminum Oxide on Silicon as a Nanotemplate
✍ Scribed by J.-H. Yen; I.-C. Leu; M.-T. Wu; C.-C. Lin; M.-H. Hon
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 501 KB
- Volume
- 11
- Category
- Article
- ISSN
- 0948-1907
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✦ Synopsis
Abstract
Carbon nanotube (CNT) arrays with different packing density were synthesized by inductively coupled plasma (ICP‐)CVD using anodic alumina oxide (AAO) on Si as a nanotemplate. Pre‐electrodeposited Ni nanowires and CH~4~ were used as catalyst and reaction gas, respectively. The parameters determining the growth density of CNT arrays, such as AAO pore length, pore diameter, growth time, DC bias, and pretreatment conditions were investigated. It was found that the transport of ion species flux in the AAO channel and the catalytic activity of Ni nanowires determined the growth behavior of CNTs. The field‐emission measurement shows that CNT arrays with a medium density of 5 × 10^8^ CNTs per cm^2^ grown on the AAO/Si substrate have both the lowest threshold field of 1.5 V μm^–1^ and the highest current density of 4 mA cm^–2^. Either a decrease or an increase of the CNT density results in inferior emission properties.