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Growth by molecular beam epitaxy of amorphous and crystalline GaNAs alloys with band gaps from 3.4 to 0.8 eV for solar energy conversion devices

✍ Scribed by S.V. Novikov; C.R. Staddon; C.T. Foxon; K.M. Yu; R. Broesler; M. Hawkridge; Z. Liliental-Weber; J. Denlinger; I. Demchenko; F. Luckert; P.R. Edwards; R.W. Martin; W. Walukiewicz


Book ID
108166250
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
627 KB
Volume
323
Category
Article
ISSN
0022-0248

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