Growth behavior of CuPc films by physical vapor deposition

✍ Scribed by Yu-Chian Chiu; Bing-Hong Chen; Da-Jeng Jan; Shiow-Jing Tang; Kuan-Cheng Chiu

• Publisher: John Wiley and Sons
• Year: 2011
• Tongue: English
• Weight: 244 KB
• Volume: 46
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/crat.201000683

✦ Synopsis

Various Cu-phthalocyanine (CuPc) films were grown from physical vapor deposition on top of indium-tinoxide glass substrates by controlling substrate temperature (T sub ), source temperature (T sou ), and growth time. From side-view SEM pictures, the growth rates for these CuPc films are estimated and can be categorized into three regions. From the Arrhenius plot of growth rate versus 1/T sub , the activation energy E A can be obtained. As T sou = 390 °C, for region (A) with T sub < 140 °C, the growth of CuPc films is dominated by the adhesion process with E A = 810 meV. For region (B) with 140 °C < T sub < 320 °C, the growth is then limited by the steric character associated with the organic molecular solids with E A = 740 meV. For region (C) with T sub > 320 °C, the re-evaporation of the CuPc adhered molecules from the interface becomes dominant.