Growth and XRD analysis of the diluted magnetic semiconductor Zn1-xNixO

✍ Scribed by K. S. Syed Ali; R. Saravanan; M. Açıkgöz

• Publisher: John Wiley and Sons
• Year: 2010
• Tongue: English
• Weight: 433 KB
• Volume: 46
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/crat.201000387

✦ Synopsis

Abstract

Diluted magnetic semiconductor compound Zn~1‐x~Ni__~x~__ O (x =0.01, 0.02, 0.03, 0.04 and 0.05) was prepared by sol‐gel method and characterized using powder XRD for the distribution of electrons and bonding in the unit cell. The electronic structural studies of this material were carried out by maximum entropy method (MEM) for the quantitative and qualitative measurement on the inclusion and the effect induced on bonding by Ni doping. The spatial arrangement of charge and the bonding behavior of this material were analyzed from 3D, 2D and 1D density distributions. The evidence for the addition of Ni in the host lattice of Zn is realized. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)