✦ LIBER ✦
Growth and structure of chemical vapor deposited silicon carbide from methyltrichlorosilane and hydrogen in the temperature range of 1100 to 1400°C: Myoung Gi So and John S Chun, J Vac Sci Technol, A6, 1988, 5–8
- Publisher
- Elsevier Science
- Year
- 1989
- Tongue
- English
- Weight
- 153 KB
- Volume
- 39
- Category
- Article
- ISSN
- 0042-207X
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