Growth and melting behaviour of thin in films on Ge(100)

✍ Scribed by G. Krausch; T. Detzel; H. Bielefeldt; R. Fink; B. Luckscheiter; R. Platzer; U. Wöhrmann; G. Schatz

• Publisher: Springer
• Year: 1991
• Tongue: English
• Weight: 941 KB
• Volume: 53
• Category: Article
• ISSN: 1432-0630
• DOI: 10.1007/bf00357195

✦ Synopsis

Growth and melting behaviour of thin indium films on Ge(100) have been investigated by Auger-electron spectroscopy (AES), atomic force microscopy (AFM) and perturbed 77 angular correlation (PAC) spectroscopy, respectively. At room temperature indium is found to grow in three-dimensional islands even at submonolayer coverages. A very rough film surface is observed for thicknesses up to 230 ML. The melting behaviour of such films has been studied by PAC. A reduction of the melting temperature Tm as well as a strong supercooling of the films is observed. The electric field gradient for lilln(ulCd) in the indium islands is determined as a function of temperature and is used to monitor the local crystalline order of the films up to temperatures just below the melting point.