## Abstract Potassium dihydrogen orthophosphate (KDP) and ammonium dihydrogen orthophosphate (ADP) single crystals added with Lβarginine have been grown by the solution methods. DC and AC electrical measurements were carried out at various temperatures along both aβ and cβ directions. Results indic
Growth and electrical characterization of SbSI and SbSOI crystals
β Scribed by Palaniappan, L.; Shanmugham, M.; Gnanam, F.D.; Ramasamy, P.
- Publisher
- Elsevier Science
- Year
- 1986
- Tongue
- English
- Weight
- 214 KB
- Volume
- 79
- Category
- Article
- ISSN
- 0022-0248
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## Abstract Ge homojunctions were deposited by means of Metal Organic Vapour Phase Epitaxy (MOVPE) on Ge substrates at 550 Β°C and 675 Β°C, using AsH~3~ as nβtype dopant. Ge~n~/Ge~p~, GaAs~n~/InGaP~n~/Ge~n~/Ge~p~ and Ge~n~/Ge~p~/Ge~p~ structures were prepared and studied, where n and p identify the l