๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Growth and Characterization of ZnGeN2 by Using Remote-Plasma Enhanced Metalorganic Vapor Phase Epitaxy

โœ Scribed by T. Misaki; K. Tsuchiya; D. Sakai; A. Wakahara; H. Okada; A. Yoshida


Book ID
104556434
Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
109 KB
Volume
0
Category
Article
ISSN
1862-6351

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Homoepitaxial Growth of ZnO by Metalorga
โœ K. Ogata; T. Kawanishi; K. Sakurai; S.-W. Kim; K. Maejima; Sz. Fujita; Sg. Fujit ๐Ÿ“‚ Article ๐Ÿ“… 2002 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 280 KB ๐Ÿ‘ 2 views

a), T. Kawanishi (b), K. Sakurai (b), S.-W. Kim (b), K. Maejima (b), Sz. Fujita (b, c), and Sg. Fujita (b) (a) Venture Business

The Growth of GaN Using Plasma Assisted
โœ Campion, R.P. ;Li, T. ;Foxon, C.T. ;Harrison, I. ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 96 KB ๐Ÿ‘ 2 views

Conventional metalorganic vapour phase epitaxy (MOVPE) has been very successful in providing high quality GaN films, however, the growth takes place at high temperature and thus requires large flow rates of high purity ammonia. In order to avoid such high and costly use of ammonia, we have developed