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Growth and characterization of InGaAs bulk crystals grown by liquid phase electro-epitaxy

✍ Scribed by Yanagase, M.; Tanaka, S.; Hiramatsu, K.; Akasaki, I.

Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
399 KB
Volume
128
Category
Article
ISSN
0022-0248

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## Abstract Results of time‐dependent simulations of growth of bulk binary III–V crystals by current controlled liquid phase electroepitaxy (LPEE) are presented using GaAs as example. Without any electrical current the LPEE system is isothermal, kept at 1073 K, thus no growth occurs. The electric c