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Growth and characterization of germanium and boron doped silicon epitaxial films

✍ Scribed by Simon S. Ang; James F. Garvin


Book ID
112812346
Publisher
Springer US
Year
1988
Tongue
English
Weight
497 KB
Volume
17
Category
Article
ISSN
0361-5235

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Silicon-germanium/silicon (Sil\_xGex/Si, x<0.50) multiple quantum wells (MQWs) have been grown on (00 1) Si substrates by gas source molecular beam epitaxy (GSMBE) using disilane (Si2Hs) and germane (GeH4) as source gases. Their structural properties have been evaluated by X-ray diffraction (XRD), r