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grown by molecular beam epitaxy

✍ Scribed by Andreev, Thomas; Liem, Nguyen Quang; Hori, Yuji; Tanaka, Mitsuhiro; Oda, Osamu; Dang, Daniel Le Si; Daudin, Bruno


Book ID
120229144
Publisher
The American Physical Society
Year
2006
Tongue
English
Weight
211 KB
Volume
73
Category
Article
ISSN
1098-0121

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## Abstract We report on the characteristics of our recent room temperature continuous‐wave InGaN quantum well laser diodes grown by by molecular beam epitaxy (MBE). Uncoated ridge waveguide lasers fabricated on freestanding GaN substrates have a continuous‐wave (cw) threshold current of 110 mA, co