✦ LIBER ✦
Grounded-gate nMOS transistor behavior under CDM ESD stress conditions
✍ Scribed by Verhaege, K.; Russ, C.; Luchies, J.-M.; Groeseneken, G.; Kuper, F.G.
- Book ID
- 114537041
- Publisher
- IEEE
- Year
- 1997
- Tongue
- English
- Weight
- 196 KB
- Volume
- 44
- Category
- Article
- ISSN
- 0018-9383
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