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Green-Emitting $(\lambda=525~{\rm nm})$ InGaN/GaN Quantum Dot Light Emitting Diodes Grown on Quantum Dot Dislocation Filters

โœ Scribed by Banerjee, Animesh; Frost, Thomas; Jahangir, Shafat; Bhattacharya, Pallab


Book ID
127381119
Publisher
IEEE
Year
2014
Tongue
English
Weight
985 KB
Volume
50
Category
Article
ISSN
0018-9197

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High performance tunnel injection InGaN/
โœ Meng Zhang; Animesh Banerjee; Pallab Bhattacharya ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 382 KB

InGaN/GaN self-organized quantum dots with density of (2 ร€ 5) ร‚ 10 10 cm ร€ 2 , internal quantum efficiency of 32% and a reduced recombination lifetime of 0.6 ns were grown by plasma assisted molecular beam epitaxy. The photoluminescence spectra of the dots peak at 495 nm at 300 K. The characteristic