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Graphitization of α-Silicon Carbide

✍ Scribed by BADAMI, D. V.

Book ID
109619843
Publisher
Nature Publishing Group
Year
1962
Tongue
English
Weight
364 KB
Volume
193
Category
Article
ISSN
0028-0836

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Due to the higher vapour pressure of silicon, silicon carbide surfaces annealed at high temperature under vacuum tend to graphitize. The comparison of graphite formation on the silicon and carbon terminations of 6H-SiC reveals significant differences in the graphitization mechanisms involved. The co