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Graphene nano-ribbon electronics

✍ Scribed by Zhihong Chen; Yu-Ming Lin; Michael J. Rooks; Phaedon Avouris


Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
641 KB
Volume
40
Category
Article
ISSN
1386-9477

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✦ Synopsis


We have fabricated graphene nano-ribbon field-effect transistor devices and investigated their electrical properties as a function of ribbon width. Our experiments show that the resistivity of a ribbon increases as its width decreases, indicating the impact of edge states. Analysis of temperature-dependent measurements suggests a finite quantum confinement gap opening in narrow ribbons. The electrical current noise of the graphene ribbon devices at low frequency is found to be dominated by the 1/f noise.


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