Grain-Orientation Induced Work Function Variation in Nanoscale Metal-Gate Transistors—Part II: Implications for Process, Device, and Circuit Design

✍ Scribed by Dadgour, H.F.; Endo, K.; De, V.K.; Banerjee, K.

• Book ID: 114620147
• Publisher: IEEE
• Year: 2010
• Tongue: English
• Weight: 752 KB
• Volume: 57
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2010.2063270