The grain boundary kinetics of a SrTiO 3 bicrystal with a misorientation relationship of 36.8°/[1 0 0] (R5) is examined at elevated temperatures by in situ high-resolution transmission electron microscopy. At 973 K, the grain boundary migrates by the propagation of atomic steps with a height of half
Grain-boundary plane orientation dependence of electrical barriers at Σ5 boundaries in SrTiO3
✍ Scribed by Sung Bo Lee; Jong-Heun Lee; Yoon-Ho Cho; Doh-Yeon Kim; Wilfried Sigle; Fritz Phillipp; Peter A. van Aken
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 854 KB
- Volume
- 56
- Category
- Article
- ISSN
- 1359-6454
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✦ Synopsis
Dependence of the electrical properties on grain-boundary plane orientation is examined by a combination of high-resolution transmission electron microscopy, impedance spectroscopy, and electron energy-loss spectrometry using two kinds of SrTiO 3 R5 ([1 0 0]/36.8°) bicrystalline grain boundaries: symmetric (3 1 0) (18.4°/18.4°) and asymmetric (8.4°/28.4°). While the symmetric grain boundary is observed to be straight with the symmetric (3 1 0)//(3 1 0) plane orientation, the asymmetric grain boundary is faceted into symmetric (3 1 0)//(3 1 0) and (2 1 0)//(2 1 0), and asymmetric (1 0 0)//(4 3 0). Grain-boundary impedance is observed only in the asymmetric grain boundary, and the electron energy-loss spectrometry quantification indicates that the asymmetric (1 0 0)//(4 3 0) facets are more oxygen-deficient than the symmetric ones. The results suggest that the asymmetric (1 0 0)//(4 3 0) facets are the most resistive among the three different facets.
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