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Gold in silicon and other analogous donors and acceptors

✍ Scribed by Mats Kleverman; AnnaLena Thilderkvist; Günter Grossmann; Hermann G Grimmeiss; George D Watkins


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
432 KB
Volume
93
Category
Article
ISSN
0038-1098

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Defect-Related Donors, Acceptors, and Tr
✍ D.C. Look 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 108 KB 👁 1 views

Point defects have been created in GaN by various types of irradiation: electrons (1 and 2.5 MeV, and the spectrum from 90 Sr); protons (0.15 MeV, 2 MeV, and 24 GeV); He ions (5.4 MeV); g-rays ( 60 Co); and sputtering and e-beam deposition of metals. They have been studied by temperaturedependent Ha