Global simulation of a silicon Czochralski furnace in an axial magnetic field

✍ Scribed by You-Rong Li; Deng-Fang Ruan; Nobuyuki Imaishi; Shuang-Ying Wu; Lan Peng; Dan-Ling Zeng

• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 507 KB
• Volume: 46
• Category: Article
• ISSN: 0017-9310
• DOI: 10.1016/s0017-9310(03)00049-8

✦ Synopsis

Control of melt flow in crystal growth process by application of the magnetic field is a practical technique for silicon single crystals. In order to understand the influence of axial magnetic field on the silicon melt flow and oxygen transport in a silicon Czochralski (Cz) furnace, a set of global numerical simulations was conducted using the finite-element method for the magnetic field strength from 0 to 0.3 T, the crystal rotation rates from 0 to 30 rpm and the crucible counter-rotation rates from 0 to )15 rpm. It was assumed that the flow was axisymmetric laminar in both the melt and the gas, the melt was incompressible and a constant temperature was imposed on the outer wall of the Cz furnace. The results indicate significantly different flow patterns, thermal and oxygen concentration fields in the melt pool when a uniform axial magnetic field is applied.