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Global model of Czochralski silicon growth to predict oxygen content and thermal fluctuations at the melt–crystal interface

✍ Scribed by I.Yu Evstratov; V.V Kalaev; V.N Nabokov; A.I Zhmakin; Yu.N Makarov; A.G Abramov; N.G Ivanov; E.A Rudinsky; E.M Smirnov; S.A Lowry; E Dornberger; J Virbulis; E Tomzig; W.v Ammon


Book ID
108411157
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
255 KB
Volume
56
Category
Article
ISSN
0167-9317

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