Spintronics is an emerging technology exploiting the spin degree of freedom and has proved to be very promising for new types of fast electronic devices. Amongst the anticipated advantages of spintronics technologies, researchers have identified the non-volatile storage of data with high density and
β¦ LIBER β¦
Giant tunneling magnetoresistance with electron beam evaporated MgO barrier and CoFeB electrodes
β Scribed by Kurt, H.; Oguz, K.; Niizeki, T.; Coey, J. M. D.
- Book ID
- 120340204
- Publisher
- American Institute of Physics
- Year
- 2010
- Tongue
- English
- Weight
- 926 KB
- Volume
- 107
- Category
- Article
- ISSN
- 0021-8979
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## Abstract The influence of seedβbuffer layers on the texture and tunneling parameters was investigated. The spin valve magnetic tunnel junctions (SVβMTJs) were deposited onto thermally oxidized Si wafers by magnetron sputtering in the following sequence of layers: substrate Si(100)/SiO~2~ 47 nm/b