Gettering Defects in Semiconductors fulfills three basic purposes:? to systematize the experience and research in exploiting various gettering techniques in microelectronics and nanoelectronics; ? to identify new directions in research, particularly to enhance the perspective of professionals and yo
Gettering Defects in Semiconductors
β Scribed by Professor Victor A. Perevoschikov, Dr. Vladimir D. Skoupov (auth.)
- Publisher
- Springer-Verlag Berlin Heidelberg
- Year
- 2005
- Tongue
- English
- Leaves
- 400
- Series
- Springer Series in Advanced Microelectronics 19
- Edition
- 1
- Category
- Library
No coin nor oath required. For personal study only.
β¦ Synopsis
Gettering Defects in Semiconductors fulfills three basic purposes:
β to systematize the experience and research in exploiting various gettering techniques in microelectronics and nanoelectronics;
β to identify new directions in research, particularly to enhance the perspective of professionals and young researchers and specialists;
β to fill a gap in the contemporary literature on the underlying semiconductor-material theory.
The authors address not only well-established gettering techniques but also describe contemporary trends in gettering technologies from an international perspective. The types and properties of structural defects in semiconductors, their generating and their transforming mechanisms during fabrication are described. The primary emphasis is placed on classifying and describing specific gettering techniques, their specificity arising from both their position in a general technological process and the regimes of their application. This book addresses both engineers and material scientists interested in semiconducting materials theory and also undergraduate and graduate students in solidβstate microelectronics and nanoelectronics. A comprehensive list of references provides readers with direction for further reading.
β¦ Table of Contents
Introduction....Pages 1-4
Basic technological processes and defect formation in the components of device structures....Pages 5-78
Effects of defects on electrophysical and functional parameters in semiconducting structures and devices....Pages 79-125
Techniques for high-temperature gettering....Pages 127-196
Physical foundations for low-temperature gettering techniques....Pages 197-340
β¦ Subjects
Optical and Electronic Materials; Industrial Chemistry/Chemical Engineering
π SIMILAR VOLUMES
<p><span>Gettering Defects in Semiconductors fulfills three basic purposes:</span></p><p><span>β to systematize the experience and research in exploiting various gettering techniques in microelectronics and nanoelectronics;</span></p><p><span>β to identify new directions in research, particularly to
<p>This volume, number 91 in the <i>Semiconductor and Semimetals</i> series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields.</p> <p
This book gives a complete overview of the properties of deep-level, localized defects in semiconductors. Such comparatively long-lived (or metastable) defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconduc
This book gives a complete overview of the properties of deep-level, localized defects in semiconductors. Such comparatively long-lived (or metastable) defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconduc