Growth of a Ge/Si/Ge (100) heterostructu
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F. Ringeisen; D. Steinmetz; S. Van; D. Bolmont; J.J. Koulmann
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Article
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1994
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Elsevier Science
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English
β 338 KB
We present photoemission and low energy electron diffraction (LEED) results obtained on a Ge/Si/Gc(100) heterostructure grown by very low pressure chemical vapour deposition of disilane (Si2H6) or germane (GeH4) on a Ge(100) 2 Γ 1 substrate. Both gases were catalytically dissociated at a hot tungste