Ge dot mid-infrared photodetectors
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Song Tong; Joo-Young Lee; Hyung-Jun Kim; Fei Liu; Kang L. Wang
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Article
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2005
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Elsevier Science
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English
โ 307 KB
Si-based normal incident mid-infrared photodetectors using Ge dots were investigated. P-I-P structures of boron-doped Ge dots embedded in the intrinsic region were grown using solid source molecular beam epitaxy. The dark current was strongly dependent on the doping level in Ge dot. The structure gr