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Germanium subcells for multijunction GaInP/GaInAs/Ge solar cells

✍ Scribed by N. A. Kalyuzhnyy; A. S. Gudovskikh; V. V. Evstropov; V. M. Lantratov; S. A. Mintairov; N. Kh. Timoshina; M. Z. Shvarts; V. M. Andreev


Book ID
111444789
Publisher
Springer
Year
2010
Tongue
English
Weight
292 KB
Volume
44
Category
Article
ISSN
1063-7826

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✍ P.K Chiang; M.L Timmons; J.A Hutchby πŸ“‚ Article πŸ“… 1987 πŸ› Elsevier Science βš– 947 KB

The growth and characterization of germanium interconnects is described in this paper. Resistivity measurements indicate that n+-GaAs/p +-Ge/p+-GaAs structures may be the most viable interconnect yet reported for monolithic cascade cells. Specific interface resistivities as low as 1 Γ— 10 -4 ~2 cm 2