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GeOI pMOSFETs Scaled Down to 30-nm Gate Length With Record Off-State Current

✍ Scribed by L. Hutin; C. Le Royer; J. Damlencourt; J. Hartmann; H. Grampeix; V. Mazzocchi; C. Tabone; B. Previtali; A. Pouydebasque; M. Vinet; O. Faynot


Book ID
124049820
Publisher
IEEE
Year
2010
Tongue
English
Weight
467 KB
Volume
31
Category
Article
ISSN
0741-3106

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