Generic reliability of the high-conductivity TaSi2/n+ poly-Si gate MOS structure: A. K. Sinha, D. B. Fraser and S. P. Murarka IEEE 18th Annual Proceedings, Reliability Physics 1980, Las Vegas, Nevada, p.159 (1980)

• Book ID: 108361186
• Publisher: Elsevier Science
• Year: 1982
• Tongue: English
• Weight: 140 KB
• Volume: 13
• Category: Article
• ISSN: 0026-2692
• DOI: 10.1016/s0026-2692(82)80094-3