Generation-recombination transient effects in partially depleted SOI transistors: systematic experiments and simulations

✍ Scribed by Munteanu, D.; Weiser, D.A.; Cristoloveanu, S.; Faynot, O.; Pelloie, J.-L.; Fossum, J.G.

• Book ID: 114537381
• Publisher: IEEE
• Year: 1998
• Tongue: English
• Weight: 150 KB
• Volume: 45
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.704363