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Generation mechanism of gate leakage current due to reverse-voltage stress in i-AlGaAs/n-GaAs HIGFETs
✍ Scribed by Takatani, S.; Matsumoto, H.; Shigeta, J.; Ohshika, K.; Yamashita, T.; Fukui, M.
- Book ID
- 114537151
- Publisher
- IEEE
- Year
- 1998
- Tongue
- English
- Weight
- 217 KB
- Volume
- 45
- Category
- Article
- ISSN
- 0018-9383
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