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Generalized Simulated Annealing Studies on Structures and Properties of Ni n ( n = 2 − 55) Clusters

✍ Scribed by Xiang, Y.; Sun, D. Y.; Gong, X. G.

Book ID
126197524
Publisher
American Chemical Society
Year
2000
Tongue
English
Weight
108 KB
Volume
104
Category
Article
ISSN
1089-5639

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Structural and electrical properties of rapidly annealed Ni/Mo Schottky barriers on n-type GaN
✍ Jyothi, I. ;Reddy, V. Rajagopal ;Reddy, M. Siva Pratap ;Choi, Chel-Jong ;Bae, Jo 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 564 KB

## Abstract Thermal annealing effects on the electrical and structural properties of Ni/Mo Schottky contacts on n‐type GaN have been investigated by current–voltage (__I–V__), capacitance–voltage (__C–V__), Secondary ion mass spectrometer (SIMS), and X‐ray diffraction (XRD) techniques. The extracte