Generalized mobility law for drain current modeling in Si MOS transistors from liquid helium to room temperatures

✍ Scribed by Emrani, A.; Balestra, F.; Ghibaudo, G.

• Book ID: 114535035
• Publisher: IEEE
• Year: 1993
• Tongue: English
• Weight: 557 KB
• Volume: 40
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.199361