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Ge-on-Si p-i-n Photodiodes With a 3-dB Bandwidth of 49 GHz

✍ Scribed by Klinger, S.; Berroth, M.; Kaschel, M.; Oehme, M.; Kasper, E.

Book ID
119804982
Publisher
IEEE
Year
2009
Tongue
English
Weight
248 KB
Volume
21
Category
Article
ISSN
1041-1135

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Zero biased Ge-on-Si photodetector on a thin buffer with a bandwidth of 3.2 GHz at 1300 nm
✍ M. Jutzi; M. Berroth; G. WΓΆhl; M. Oehme; E. Kasper πŸ“‚ Article πŸ“… 2005 πŸ› Elsevier Science 🌐 English βš– 353 KB

A Ge-on-Si photodetector grown on a thin buffer on top of a Si substrate is presented. The device exhibits a zero bias bandwidth of 3.2 GHz and a photoresponsivity of 104 mA/W for a wavelength of 1300 nm. Zero bias operation is proposed to minimize the influence of dark currents on the device perfor