In this paper, the effects of Ge content and profile shape on the performance of a SiGe-based heterojunction bipolar transistor (HBT) are investigated. The common-emitter current gain, the early voltage, and the transit time of SiGe HBTs are calculated and computed for different Ge profiles as well
β¦ LIBER β¦
Ge-content dependent efficiency of Si/SiGe heterojunction solar cell
β Scribed by Mukul K. Das, Santosh K. Choudhary
- Book ID
- 120782782
- Publisher
- Springer
- Year
- 2013
- Tongue
- English
- Weight
- 656 KB
- Volume
- 112
- Category
- Article
- ISSN
- 1432-0630
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