Gate-voltage-induced realization of different rational fractions ofh/e2at fixed values of current and magnetic field
✍ Scribed by M. Blöcker; G. Nachtwei; F.-J. Ahlers; L. Bliek
- Book ID
- 102616082
- Publisher
- Elsevier Science
- Year
- 1998
- Tongue
- English
- Weight
- 159 KB
- Volume
- 23
- Category
- Article
- ISSN
- 0749-6036
No coin nor oath required. For personal study only.
✦ Synopsis
We present magnetotransport measurement results obtained on samples with a windowshaped geometry and Schottky gates in the quantum Hall regime. The investigated samples consist of two Hall bars shorted by wide regions of 2DEG. With Schottky gates across each of the Hall bars electron densities and hence filling factors within the two arms of the structures can individually be tuned.
We show that by applying appropriate gate voltages to the samples four-terminal resistances equal to different rational fractions of h/e 2 can be realized at fixed magnetic field. The measurement results can be explained in the edge channel picture of the quantum Hall effect as well as in a local transport model. In both models it is the interplay between the gate-voltage-induced sub-gate filling factors and the resulting partition of the total current onto the two sample arms that leads to the observed phenomena.