Gate-Length Scaling of Ultrashort Metamorphic High-Electron Mobility Transistors With Asymmetrically Recessed Gate Contacts for Millimeter- and Submillimeter-Wave Applications

✍ Scribed by Dong Xu; Xiaoping Yang; Kong, W.M.T.; Seekell, P.; Louie, K.; Pleasant, L.; Mohnkern, L.; Dugas, D.M.; Kanin Chu; Karimy, H.F.; Duh, K.H.G.; Smith, P.M.; Chao, P.C.

• Book ID: 114620410
• Publisher: IEEE
• Year: 2011
• Tongue: English
• Weight: 444 KB
• Volume: 58
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2011.2113250