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Gate length scalability of n-MOSFETs down to 30 nm: Comparison between LDD and non-LDD structures
✍ Scribed by Murakami, E.; Yoshimura, T.; Goto, Y.; Kimura, S.
- Book ID
- 114538098
- Publisher
- IEEE
- Year
- 2000
- Tongue
- English
- Weight
- 251 KB
- Volume
- 47
- Category
- Article
- ISSN
- 0018-9383
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