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Gate insulators and interface effects in organic thin-film transistors

✍ Scribed by F.A. Yildirim; R.R. Schliewe; W. Bauhofer; R.M. Meixner; H. Goebel; W. Krautschneider


Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
643 KB
Volume
9
Category
Article
ISSN
1566-1199

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Gate bias induced leakage current and drain current offset limit device performance in poly 3-hexylthiophene (P3HT) organic thin film transistors (OTFTs). The drain current offset distorts the drain current in the linear region of the transistor performance curve, making it difficult to extract devi