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Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

โœ Scribed by Lansbergen, G. P.; Rahman, R.; Wellard, C. J.; Woo, I.; Caro, J.; Collaert, N.; Biesemans, S.; Klimeck, G.; Hollenberg, L. C. L.; Rogge, S.


Book ID
109945705
Publisher
Nature Publishing Group
Year
2008
Tongue
English
Weight
633 KB
Volume
4
Category
Article
ISSN
1745-2473

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