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Gate controlled Coulomb blockade effects in the conduction of a silicon quantum wire

✍ Scribed by Smith, R. A.; Ahmed, H.

Book ID
111926810
Publisher
American Institute of Physics
Year
1997
Tongue
English
Weight
674 KB
Volume
81
Category
Article
ISSN
0021-8979

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We present an experimental study of the uctuations of Coulomb blockade peak positions of a quantum dot. The dot is deΓΏned by patterning the two-dimensional electron gas of a silicon MOSFET structure using stacked gates. The ratio of charging energy to single-particle energy is considerably larger th