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Gate-Bias Controlled Charge Trapping as a Mechanism for NO2 Detection with Field-Effect Transistors

✍ Scribed by Anne-Marije Andringa; Juliaan R. Meijboom; Edsger C. P. Smits; Simon G. J. Mathijssen; Paul W. M. Blom; Dago M. de Leeuw


Publisher
John Wiley and Sons
Year
2010
Tongue
English
Weight
550 KB
Volume
21
Category
Article
ISSN
1616-301X

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