GaSb-based mid-infrared 2–5 μm laser diodes

✍ Scribed by André Joullié; Philippe Christol

• Book ID: 104446514
• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 567 KB
• Volume: 4
• Category: Article
• ISSN: 1631-0705
• DOI: 10.1016/s1631-0705(03)00098-7

✦ Synopsis

Laser diodes emitting at room temperature in continuous wave regime (CW) in the mid-infrared (2-5 µm spectral domain) are needed for applications such as high sensitivity gas analysis by tunable diode laser absorption spectroscopy (TDLAS) and environmental monitoring. Such semiconductor devices do not exist today, with the exception of type-I GaInAsSb/AlGaAsSb quantum well laser diodes which show excellent room temperature performance, but only in the 2.0-2.6 µm wavelength range. Beyond 2.6 µm, type-II GaInAsSb/GaSb QW lasers, type-III 'W' InAs/GaInSb lasers, and interband quantum cascade lasers employing the InAs/Ga(In)Sb/AlSb system, all based on GaSb substrate, are competitive technologies to reach the goal of room temperature CW operation. These different technologies are discussed in this paper.