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Gas source molecular beam epitaxy grown InGaAs(P)N-InP long-wavelength (/spl lambda/>1.65 μm) photodetectors using a solid arsenic source

✍ Scribed by Jian Wei; Lin, W.; Thomson, K.J.; Forrest, S.R.


Book ID
119788428
Publisher
IEEE
Year
2001
Tongue
English
Weight
88 KB
Volume
13
Category
Article
ISSN
1041-1135

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